Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module

Gallium Nitride power devices, with an energy bandgap roughly three times larger than that of silicon, provide lower specific conduction resistance and faster switching speeds. These characteristics enable the design of more efficient and compact power converters. However, challenges such as high voltage overshoot during rapid switching transients continue to limit the full potential of GaN technology. This study presents an innovative alternative to the conventional wire-bonded GaN power module through the development of a flip-chip design employing solder ball bonding. A detailed finite element analysis (FEA) model is constructed to evaluate the junction temperature and parasitic inductance of power modules. Furthermore, the bonding strength is examined to ensure the mechanical integrity of the design. The proposed flip-chip design is experimentally validated by static characterization and double pulse test. The design reduces parasitics and enables compact, efficient GaN power electronics for high-frequency use.