A New Reduced Order Analytical Switching Model for eGaN HEMTs

This paper presents a new reduced order, closed form analytical model for predicting the switching behavior of eGaN HEMTs. Design-oriented analyses of the equivalent circuit for each switching sub-interval during both top side device turn on and turn off are carried out to derive a set of simple and user-friendly equations for all electrical quantities. These equations are such that they are expressed explicitly with the eGaN HEMT parasitic and equivalent circuit parameters, revealing more physical insight into the switching characteristics of the eGaN HEMTs. Unlike the existing numerical models, the new model can be used to perform eGaN HEMT switching loss computations on the closed form analytical basis. The model is validated with both simulation and experimentation.