Organic Direct Bonded Copper-Based Rapid Prototyping for Silicon Carbide Power Module Packaging
Silicon Carbide (SiC) power devices are playing ever-growing roles in high power density power electronic (PE) converters by offering benefits such as high voltage rating, fast transient, and high thermal performance. Organic direct bonded copper (ODBC)-based packaging, due to its ductility and ease to handle, allows the possibility of more flexible layout design which may better tap the potential of SiC benefits. In this work, an ODBC-based prototyping routine is developed which accelerates the iterations of packaging layout design with low cost. The property of ODBC and its handling is briefly introduced, and tools and fabrication steps explained. Following this routine, a 1.2 kV SiC half-bridge (HB) power module is designed and fabricated with the focus on sub-nanohenry ultra-low loop inductance. Simulation and experimental validation are conducted, respectively.
Authors
- Faisal Khan
- Douglas DeVoto (ORCID: https://orcid.org/0000-0003-4817-9647)
- Shuofeng Zhao (ORCID: https://orcid.org/0000-0002-0802-1979)
- Sreekant Narumanchi (ORCID: https://orcid.org/0000-0001-5337-6069)
- Xiaoling Li (ORCID: https://orcid.org/0009-0001-2527-5399)
- Sarwar Islam
- M. R. Tant
- Joshua Major
Institutions
- National Laboratory of the Rockies (US)
- Advanced Power Electronics (United States) (US)
Publication Details
- Published
- 2025-03-16
- DOI
- https://doi.org/10.1109/apec48143.2025.10977077
- Citations
- 2
- Primary Topic
- 3D IC and TSV technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- U.S. Department of Energy
- National Renewable Energy Laboratory