Organic Direct Bonded Copper-Based Rapid Prototyping for Silicon Carbide Power Module Packaging

Silicon Carbide (SiC) power devices are playing ever-growing roles in high power density power electronic (PE) converters by offering benefits such as high voltage rating, fast transient, and high thermal performance. Organic direct bonded copper (ODBC)-based packaging, due to its ductility and ease to handle, allows the possibility of more flexible layout design which may better tap the potential of SiC benefits. In this work, an ODBC-based prototyping routine is developed which accelerates the iterations of packaging layout design with low cost. The property of ODBC and its handling is briefly introduced, and tools and fabrication steps explained. Following this routine, a 1.2 kV SiC half-bridge (HB) power module is designed and fabricated with the focus on sub-nanohenry ultra-low loop inductance. Simulation and experimental validation are conducted, respectively.

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Publication Details

Published
2025-03-16
DOI
https://doi.org/10.1109/apec48143.2025.10977077
Citations
2
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
1.46

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article

Organic Direct Bonded Copper-Based Rapid Prototyping for Silicon Carbide Power Module Packaging

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2 citations
3D IC and TSV technologies
1.46
article

Organic Direct Bonded Copper-Based Rapid Prototyping for Silicon Carbide Power Module Packaging

Faisal Khan, Douglas DeVoto, Shuofeng Zhao, Sreekant Narumanchi, Xiaoling Li, Sarwar Islam, M. R. Tant, Joshua Major
article en
2 citations

Abstract

Silicon Carbide (SiC) power devices are playing ever-growing roles in high power density power electronic (PE) converters by offering benefits such as high voltage rating, fast transient, and high thermal performance. Organic direct bonded copper (ODBC)-based packaging, due to its ductility and ease to handle, allows the possibility of more flexible layout design which may better tap the potential of SiC benefits. In this work, an ODBC-based prototyping routine is developed which accelerates the iterations of packaging layout design with low cost. The property of ODBC and its handling is briefly introduced, and tools and fabrication steps explained. Following this routine, a 1.2 kV SiC half-bridge (HB) power module is designed and fabricated with the focus on sub-nanohenry ultra-low loop inductance. Simulation and experimental validation are conducted, respectively.

National Laboratory of the Rockies (US), Advanced Power Electronics (United States) (US)
U.S. Department of Energy, National Renewable Energy Laboratory
Openalex Percentile: Top 18%
3D IC and TSV technologies
1.46
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