Stand-alone R_DS−ON sensor for In-Situ Prognostic, Protection and Reliability Enhancement of Power Converters

The junction temperature is critical for evaluating the reliability of power semiconductors. However, conventional temperature-sensing methods are often inadequate for effective in situ prognostics. Research has demonstrated that the on-state resistance of a power semiconductor can be measured in situ and has a direct correlation with junction temperature. By estimating this on-state resistance, we can derive real- time junction temperature data, which can then be used to optimize converter control and enhance reliability. This study introduces a standalone on-state resistance sensor capable of measuring on-state voltage and device current. The sensor digitizes and transmits values for voltage, current, and on-state resistance. This integrated package facilitates in situ prognostics, provides robust device protection, and enables improved power converter control, ultimately leading to enhanced performance and reliability. The study focuses on evaluating the feasibility and performance of this standalone on-state resistance sensor and exploring its extended applications such as converter control and device characterization.