Modeling and Characterization of Current and Future 1.2 kV Wide Bandgap Semiconductor-based MOSFETs

This paper presents the design and simulation of a 1.2 kV vertical GaN based MOSFET. First, a physics-based TCAD model of the proposed vertical GaN MOSFET structure is discussed. The proposed MOSFET structure employs hybrid edge termination to achieve high-breakdown with low on-resistance. The feasibility of the proposed device is demonstrated through static characterization, and a circuit-simulation model of the GaN MOSFET is extracted from the TCAD design. Next, an experimental Double Pulse Test (DPT) is performed on similarly-rated commercially available Si and SiC MOSFETs. An empirically validated circuit simulation model of the test-stand is then used to compare the simulated switching performance of the theoretical GaN MOSFET with that of the experimentally measured SiC and Si MOSFETs. The results show that the low technology readiness level GaN MOSFET achieved superior performance to the Si MOSFET, while demonstrating comparable performance to the SiC MOSFET. Thus, this paper can be used to further guide and improve both the breakdown capability and switching characteristics of future vertical GaN MOSFETs.