A Physics-Based Temperature Dependent Analytical Model For 2DEG Density in AlGaN/GaN HEMT Devices

Accurate modeling of the temperature dependent two-dimensional electron gas (2DEG) is very crucial in applied power electronics, given its critical role in High Electron Mobility Transistor (HEMT) characteristics. In view of this, the temperature dependency of 2 DEG has been analyzed for different gate voltages and modeled for the temperature range from 300K to 500K. Relying on the device physics, the temperature dependence of various parameters including bandgap variation, fermi level energy, barrier height reduction, threshold voltage changes and their effects on electron sheet charge density (2DEG) has been included. This model will also integrate the effects of sub-band energy variations, polarization changes, and material property adjustment due to temperature changes. The goal is to provide a robust analytical framework that can predict device behavior accurately across a spectrum of operational gate voltage and temperature conditions. This anticipated model will facilitate the development of power electronics that are more reliable and efficient, capable of operating effectively in diverse and demanding environments.