Innovation Active Gate Drive method (named TriC3™) for MOSFET heat reduction and EMI
An innovative Active Gate Drive method (TriC3™) that suppresses EMI and reduces heat generation of MOSFET power devices in motor drive systems has been developed. TriC3™ achieves these functions by monitoring various voltages around the MOSFET power device and using this voltages information to intelligently control the gate drive current of the MOSFET power device. On an actual motor system, TriC3™ has been proven to lower EMI and measurements have shown that heat generated by the MOSFET power devices can be reduced by 35% compared to conventional constant current drive with the same EMI level.
Authors
- Hisashi Sugie
Institutions
- ROHM (JP)
Publication Details
- Published
- 2025-03-16
- DOI
- https://doi.org/10.1109/apec48143.2025.10977214
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00