Innovation Active Gate Drive method (named TriC3™) for MOSFET heat reduction and EMI

An innovative Active Gate Drive method (TriC3™) that suppresses EMI and reduces heat generation of MOSFET power devices in motor drive systems has been developed. TriC3™ achieves these functions by monitoring various voltages around the MOSFET power device and using this voltages information to intelligently control the gate drive current of the MOSFET power device. On an actual motor system, TriC3™ has been proven to lower EMI and measurements have shown that heat generated by the MOSFET power devices can be reduced by 35% compared to conventional constant current drive with the same EMI level.

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Publication Details

Published
2025-03-16
DOI
https://doi.org/10.1109/apec48143.2025.10977214
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
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article

Innovation Active Gate Drive method (named TriC3™) for MOSFET heat reduction and EMI

Hisashi Sugie
Advancements in Semiconductor Devices and Circuit Design
article

Innovation Active Gate Drive method (named TriC3™) for MOSFET heat reduction and EMI

Hisashi Sugie
article en

Abstract

An innovative Active Gate Drive method (TriC3™) that suppresses EMI and reduces heat generation of MOSFET power devices in motor drive systems has been developed. TriC3™ achieves these functions by monitoring various voltages around the MOSFET power device and using this voltages information to intelligently control the gate drive current of the MOSFET power device. On an actual motor system, TriC3™ has been proven to lower EMI and measurements have shown that heat generated by the MOSFET power devices can be reduced by 35% compared to conventional constant current drive with the same EMI level.

ROHM (JP)
Affordable and clean energy
Openalex Percentile: Top 93%
Advancements in Semiconductor Devices and Circuit Design
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Innovation Active Gate Drive method (named TriC3™) for MOSFET heat reduction and EMI — Hisashi Sugie · (2025) | TGRS Research Map | TGRS