Ultralow-pressure mechanical-motion switching of ferroelectric polarization

Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics and holds promise for human interface applications. The prevailing mechanical approach is locally induced flexoelectricity with large strain gradients. However, this approach usually requires huge mechanical forces, which greatly impede device applications. Here, we report an approach of using triboelectric effect to mechanically, reversibly switch ferroelectric polarization across α-In<sub>2</sub>Se<sub>3</sub> ferroelectric memristors. Through contact electrification and electrostatic induction effects, triboelectric units are used to sensitively detect mechanical forces and generate electrical voltage pulses to trigger α-In<sub>2</sub>Se<sub>3</sub> resistance switching. We realize multilevel resistance states under different mechanical forces, by which a neuromorphic stress system is demonstrated. Notably, we achieve the reversal of α-In<sub>2</sub>Se<sub>3</sub> ferroelectric polarization with a record-low mechanical force of ~10 kilopascals and even with tactile touches. Our work provides a fundamental but pragmatic strategy for creating mechanical tactile ferroelectric memory devices.

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Publication Details

Journal
Science Advances
Published
2025-05-01
DOI
https://doi.org/10.1126/sciadv.adr5337
Citations
6
Primary Topic
Acoustic Wave Resonator Technologies
Type
article
Field-Weighted Citation Impact
4.04
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article

Ultralow-pressure mechanical-motion switching of ferroelectric polarization

Weijin Hu, Xin He, Yuda Zhao, Zheng‐Dong Luo et al.
6 citations
Science Advances
Acoustic Wave Resonator Technologies
4.04
article

Ultralow-pressure mechanical-motion switching of ferroelectric polarization

Weijin Hu, Xin He, Yuda Zhao, Zheng‐Dong Luo, Bowen Zhu, Z. Zhang, Bin Yu, Fei Xue, Jian Sun, Genquan Han, Peijian Wang, Shangui Lan, Jianjun Luo, Xixiang Zhang, Yang Xu, Kai Chang, Xun Han, Zheng Li, Huan Hu, Yan Liu, Yitong Chen, Baoyu Wang, Ding Wang
article en
6 citations

Abstract

Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics and holds promise for human interface applications. The prevailing mechanical approach is locally induced flexoelectricity with large strain gradients. However, this approach usually requires huge mechanical forces, which greatly impede device applications. Here, we report an approach of using triboelectric effect to mechanically, reversibly switch ferroelectric polarization across α-In<sub>2</sub>Se<sub>3</sub> ferroelectric memristors. Through contact electrification and electrostatic induction effects, triboelectric units are used to sensitively detect mechanical forces and generate electrical voltage pulses to trigger α-In<sub>2</sub>Se<sub>3</sub> resistance switching. We realize multilevel resistance states under different mechanical forces, by which a neuromorphic stress system is demonstrated. Notably, we achieve the reversal of α-In<sub>2</sub>Se<sub>3</sub> ferroelectric polarization with a record-low mechanical force of ~10 kilopascals and even with tactile touches. Our work provides a fundamental but pragmatic strategy for creating mechanical tactile ferroelectric memory devices.

Science AdvancesVol. 11(18)
Xuzhou University of Technology (CN), Central South University (CN), Xidian University (CN), Chinese Academy of Sciences (CN), Westlake University (CN), Institute of Metal Research (CN), Beijing Institute of Nanoenergy and Nanosystems (CN), Zhejiang University-University of Edinburgh Institute (CN), King Abdullah University of Science and Technology (SA), Zhejiang University (CN)
Openalex Percentile: Top 6%
Acoustic Wave Resonator Technologies
4.04
DOIOpen Access PDFOpenAlex
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