A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures

Abstract Binary oxide ferroelectrics like doped HfO 2 , compatible with complementary metal‐oxide‐semiconductor (CMOS) platforms, have gained significant interest for energy efficient, scalable, high‐performance non‐volatile memory and neuromorphic technologies. However, there is no single model for doped hafnia systems that can explain physical properties of the system while being circuit simulation compatible and computationally efficient. It is presented physics‐based compact modelling based on the Jiles‐Atherton equations to reproduce experimentally measured polarization switching in ferroelectric thin film capacitors under different electric field and temperature conditions. Additionally, device‐to‐device variation effect on the model parameters is presented, which will enable large‐scale integration of the FE components to complex functional circuits. Due to increasing interest in cryogenic electronics for quantum computing and space technologies, effect of temperatures on polarization switching is investigated down to 4 K. It is shown the model can reproduced the experimental polarization‐voltage relation of Hafnium Zirconium Oxide capacitors with nearly 100% accuracy, for different electric fields and temperatures down to 4 K, including analog switching. It is find cooling the devices below 100 K increases polarization update linearity and symmetry significantly. This results represent an important advancement toward application of ferroelectric capacitors for large‐scale memory and neuromorphic circuits operating down to deep cryogenic temperatures.