Anisotropic Material Removal Mechanisms and Chemical Mechanical Polishing Performance of Gallium Arsenide Single Crystal Wafers

Abstract Gallium arsenide single crystals are integral to a multitude of applications across aerospace, industrial manufacturing, medical technology, and telecommunications due to their unique anisotropic structural and mechanical properties. Understanding the material removal mechanism of GaAs single crystal wafers is essential for the efficient and reliable processing of these materials. This study delves into the intricacies of the material removal process by conducting a series of gallium arsenide single‐crystal scratch experiments using a nanomechanics testing system. The experiments scrutinized different crystal surfaces across various specimens, meticulously documenting the formation of micro/macro scale scratches, the nature of the groove material removal, the depth of the scratches, and the patterns and distribution of cracks. Additionally, the study employs Raman spectrometry to analyze the deformation and phase transition processes of the GaAs crystals. To complement these findings, chemical and mechanical polishing experiments are conducted on GaAs wafers to further explore the material's properties and the behavior of material removal. These comprehensive analyses contribute to a deeper understanding of the processing dynamics of gallium arsenide single crystals, paving the way for advancements in material engineering and device fabrication.