Ultra-sensitive heterojunction double gate BioTFET device for SARS-CoV-2 biomolecules detection
The persisting SARS-CoV-2 genetic mutation could unintentionally increase human transmission, mortality, and aggravation. Since no specific pharmaceutical therapies or vaccinations exist, rapid detection and successful treatment are essential for managing the COVID-19 pandemic. BioTFETs exhibit superior sensitivity and faster response times than bioFETs, which are more vulnerable to substantial subthreshold swing and short-channel effects. This article presents the Dielectrically Modulated-Double Gate-Heterojunction-Tunnel FET-based biosensor (DG-bioHTFET) specifically engineered to identify and detect the nucleocapsid protein and RNA biomolecules with specific permittivity (k) of SARS-CoV-2 biomolecules embedded in the nanogaps. At V<sub>gs</sub> = 1.5 V, the proposed device achieves a drain current (I<sub>ds</sub>) of 2.32 × 10<sup>- 5</sup> A/µm. At k = 5 and k = 3.64, the I<sub>ON</sub>/I<sub>OFF</sub> ratios are 3.550 × 10<sup>5</sup> and 3.403 × 10<sup>5</sup>, respectively. The data suggest that the device exhibits increased sensitivity to biomolecules possessing elevated dielectric constants. It is feasible to design ultra-sensitive TFET biosensors as a bio-recognition unit, which offers the benefits of rapid label-free detection and high sensitivity. The device exhibits superior performance in terms of high drain current with enhanced sensitivity for precise biosensing applications.
Authors
- A. Sharon Geege
- T. Ananth Kumar (ORCID: https://orcid.org/0000-0002-0494-7803)
- I. Vivek Anand
- P. Vimala (ORCID: https://orcid.org/0000-0002-8247-6621)
- N. Mohankumar
- T. S. Arun Samuel
- P. Suveetha Dhanaselvam (ORCID: https://orcid.org/0000-0001-8441-1349)
Institutions
- Symbiosis International University (IN)
- Velammal Medical College Hospital and Research Institute (IN)
- National College (MX)
Publication Details
- Journal
- Scientific Reports
- Published
- 2025-04-30
- DOI
- https://doi.org/10.1038/s41598-025-99817-9
- Citations
- 9
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 6.57