Constructing A Carrier Collection Framework at The Rear Interface in Cu<sub>2</sub>ZnSn(S, Se)<sub>4</sub> Solar Cells by Selenizing an Inserted CuBi<sub>2</sub>O<sub>4</sub> Nanolayer
This work introduces the application of an ultrathin CuBi<sub>2</sub>O<sub>4</sub> (CBO) nanolayer to improve the performance of Cu<sub>2</sub>ZnSn(S, Se)<sub>4</sub> (CZTSSe) photovoltaic cells. The CBO layer is situated between molybdenum (Mo) and the CZTSSe absorber, which promotes the formation of a more compact absorber layer and larger CZTSSe grain sizes. Furthermore, the decomposition of the CBO layer during high-temperature annealing leads to the formation of Cu-doped bismuth selenide in the bottom region of the absorber. The Cu-doped bismuth selenide improves carrier transport and enhances the electrical properties at the rear interface of the CZTSSe device. These enhancements lead to notable improvements in all key photovoltaic parameters, thereby boosting the overall efficiency of the solar cell.
Authors
- Yixiong Ji (ORCID: https://orcid.org/0000-0002-2919-7826)
- Eser Metin Akinoglu (ORCID: https://orcid.org/0000-0002-0463-5543)
- Xiaojing Hao (ORCID: https://orcid.org/0000-0001-5903-4481)
- Paul Mulvaney (ORCID: https://orcid.org/0000-0002-8007-3247)
- Xueyun Zhang
- Jialiang Huang (ORCID: https://orcid.org/0000-0002-8954-7680)
- Fangyang Liu (ORCID: https://orcid.org/0000-0002-0580-7888)
Institutions
- Central South University (CN)
- The University of Melbourne (AU)
- South China Normal University (CN)
- UNSW Sydney (AU)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2025-04-29
- DOI
- https://doi.org/10.1021/acsami.4c14234
- Citations
- 3
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 2.19
Funders
- National Natural Science Foundation of China
- Australian Renewable Energy Agency
- Australian Research Council
- Centre of Excellence in Exciton Science