Bandgap of Epitaxial Single-Crystal BiFe1−xMnxO3 Films Grown Directly on SrTiO3/Si(001)

We report the growth and optical characterization of single-crystal BiFe<sub>1-x</sub>Mn<sub>x</sub>O<sub>3</sub> thin films directly on SrTiO<sub>3</sub>/Si(001) substrates using molecular beam epitaxy. X-ray diffraction confirmed epitaxial growth, film crystallinity, and sharp interface quality. Scanning electron microscopy and energy dispersive X-ray spectroscopy verified uniform film morphology and successful Mn incorporation. Spectroscopic ellipsometry revealed a systematic bandgap reduction with increasing Mn concentration, from 2.7 eV in BiFeO<sub>3</sub> to 2.58 eV in BiFe<sub>0.74</sub>Mn<sub>0.26</sub>O<sub>3</sub>, consistent with previous reports on Mn-doped BiFeO<sub>3</sub>. These findings highlight the potential of BiFe<sub>1</sub>₋<sub>x</sub>Mn<sub>x</sub>O<sub>3</sub> films for bandgap engineering, advancing their integration into silicon-compatible multifunctional optoelectronic and photovoltaic applications.

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Publication Details

Journal
Materials
Published
2025-04-29
DOI
https://doi.org/10.3390/ma18092022
Citations
2
Primary Topic
Multiferroics and related materials
Type
article
Field-Weighted Citation Impact
0.85

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article

Bandgap of Epitaxial Single-Crystal BiFe1−xMnxO3 Films Grown Directly on SrTiO3/Si(001)

S. Lindsey, Ryan Cottier, John Miracle, Nikoleta Theodoropoulou et al.
2 citations
Materials
Multiferroics and related materials
0.85
article

Bandgap of Epitaxial Single-Crystal BiFe1−xMnxO3 Films Grown Directly on SrTiO3/Si(001)

S. Lindsey, Ryan Cottier, John Miracle, Nikoleta Theodoropoulou, Samuel R. Cantrell
article en
2 citations

Abstract

We report the growth and optical characterization of single-crystal BiFe<sub>1-x</sub>Mn<sub>x</sub>O<sub>3</sub> thin films directly on SrTiO<sub>3</sub>/Si(001) substrates using molecular beam epitaxy. X-ray diffraction confirmed epitaxial growth, film crystallinity, and sharp interface quality. Scanning electron microscopy and energy dispersive X-ray spectroscopy verified uniform film morphology and successful Mn incorporation. Spectroscopic ellipsometry revealed a systematic bandgap reduction with increasing Mn concentration, from 2.7 eV in BiFeO<sub>3</sub> to 2.58 eV in BiFe<sub>0.74</sub>Mn<sub>0.26</sub>O<sub>3</sub>, consistent with previous reports on Mn-doped BiFeO<sub>3</sub>. These findings highlight the potential of BiFe<sub>1</sub>₋<sub>x</sub>Mn<sub>x</sub>O<sub>3</sub> films for bandgap engineering, advancing their integration into silicon-compatible multifunctional optoelectronic and photovoltaic applications.

MaterialsVol. 18(9)
Texas State University (US)
National Science Foundation, U.S. Department of Defense
Openalex Percentile: Top 29%
Multiferroics and related materials
0.85
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