Strong Superconducting Proximity Compatible with Fermi-Level Tuning at Top Surfaces of Bulk Insulating SnTe-Type Semiconductors

The signature of multiple Majorana zero modes (MZMs) was recently observed in a single vortex of topological crystalline insulator SnTe. However, to directly distinguish the MZMs, the Fermi level should be very close to the Dirac points of topological surface states and thus be inside the insulating bulk bandgap, leading to a significant suppression of proximity-induced superconductivity in the vertical heterostructure. Here, we demonstrate that both the strong superconducting proximity effect and the small Fermi energy can be simultaneously satisfied in the lateral heterostructures composed of SnTe-type semiconductors and Pb. Even though the region is bulk insulating with only a few surface states crossing the Fermi level, the surface superconductivity can still be transferred over a long distance at 4.2 K, indicating high device stability with lateral superconducting proximity. Our findings suggest that the lateral two-sided heterostructure is a promising platform for further detecting the evolution of multiple MZMs.

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Publication Details

Journal
Nano Letters
Published
2025-04-29
DOI
https://doi.org/10.1021/acs.nanolett.5c01610
Citations
1
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
1.25

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Strong Superconducting Proximity Compatible with Fermi-Level Tuning at Top Surfaces of Bulk Insulating SnTe-Type Semiconductors

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article

Strong Superconducting Proximity Compatible with Fermi-Level Tuning at Top Surfaces of Bulk Insulating SnTe-Type Semiconductors

Shiyong Wang, Dandan Guan, Yaoyi Li, Canhua Liu, Jinfeng Jia, Hao Zheng, Zehua Gao, Liang Liu, Xiaoxue Liu, Hao Yang, Weiyan Zheng, Zhaoxia Yi, Bangjin Xie
article en
1 citations

Abstract

The signature of multiple Majorana zero modes (MZMs) was recently observed in a single vortex of topological crystalline insulator SnTe. However, to directly distinguish the MZMs, the Fermi level should be very close to the Dirac points of topological surface states and thus be inside the insulating bulk bandgap, leading to a significant suppression of proximity-induced superconductivity in the vertical heterostructure. Here, we demonstrate that both the strong superconducting proximity effect and the small Fermi energy can be simultaneously satisfied in the lateral heterostructures composed of SnTe-type semiconductors and Pb. Even though the region is bulk insulating with only a few surface states crossing the Fermi level, the surface superconductivity can still be transferred over a long distance at 4.2 K, indicating high device stability with lateral superconducting proximity. Our findings suggest that the lateral two-sided heterostructure is a promising platform for further detecting the evolution of multiple MZMs.

Nano LettersVol. 25(19)
Shanghai Jiao Tong University (CN), Southern University of Science and Technology (CN), Hefei University (CN)
National Natural Science Foundation of China, Ministry of Science and Technology of the People's Republic of China, Science and Technology Commission of Shanghai Municipality
Affordable and clean energy
Openalex Percentile: Top 22%
Topological Materials and Phenomena
1.25
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