1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance

This paper proposes a 1200V 4H-SiC MOSFET incorporating a High-K dielectric-integrated fused source-gate (HKSG) structure, engineered to concurrently enhance the third-quadrant operation and high-frequency figure of merit (HF-FOM). The High-K dielectric enhances the electric field effect, reducing the threshold voltage of the source-gate. As a result, the reverse conduction voltage drops from 2.79 V (body diode) to 1.53 V, and the bipolar degradation is eliminated. Moreover, by incorporating a shielding area within the merged source-gate architecture, the gate-to-drain capacitance <i>C</i>_gd of the HKSG-MOS is reduced. The simulation results show that the HF-FOM <i>C</i>_gd × <i>R</i>_on,sp and <i>Q</i>_gd × <i>R</i>_on,sp of the HKSG-MOS are decreased by 48.1% and 58.9%, respectively, compared with that of conventional SiC MOSFET. The improved performances make the proposed SiC MOSFEET have great potential in high-frequency power applications.