Modeling of Magnetoconductivity (MC) Behavior in Dilute p-Si/SiGe/Si
In this study, we investigate the magnetoconductivity behavior in a 2D p-Si/SiGe/Si system. To achieve this, we develop a theoretical model that incorporates three key contributions, the weak localization effect, electron–electron interaction effects, and the Zeeman effect, which is considered only in the presence of a magnetic field. We then compare our theoretical predictions with experimental magnetoconductivity data, analyzing both the consistencies and discrepancies between the model and the measurements. Through this comparison, we aim to provide a deeper physical understanding of the factors influencing magnetoconductivity in this system.
Authors
- A. El kaaouachi (ORCID: https://orcid.org/0000-0001-5998-0726)
- Mohammad L. Hassan (ORCID: https://orcid.org/0000-0003-1929-8778)
- Samir Elouaham (ORCID: https://orcid.org/0000-0002-8344-9975)
- Said Dlimi (ORCID: https://orcid.org/0000-0002-3086-5430)
- Boujemaa Nassiri (ORCID: https://orcid.org/0009-0007-8838-8239)
- Hamza Mabchour (ORCID: https://orcid.org/0009-0006-5776-7570)
- Yassine Essakali (ORCID: https://orcid.org/0009-0007-0131-2275)
Institutions
- Université Ibn-Tofail (MA)
- Université Ibn Zohr (MA)
- Universiapolis - Université Internationale d'Agadir (MA)
- Chouaib Doukkali University (MA)
Publication Details
- Journal
- Electronic Materials
- Published
- 2025-04-29
- DOI
- https://doi.org/10.3390/electronicmat6020005
- Citations
- 1
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 1.25