Stability Investigation in Tellurium Field-Effect Transistors Grown via Hydrothermal Synthesis

Negative Bias Temperature Instability (NBTI) remains a critical concern affecting the reliability of field-effect transistors (FETs). Quasi-2D Tellurium (Te) emerges as a promising p-type alternative for high-performance FETs due to its high hole mobility and excellent air stability. In this study, FETs based on quasi-2D Te grown via the hydrothermal method were fabricated, and the NBTI effect was investigated under various conditions of negative bias stress, temperature, and stress duration. The power-law time-exponents (n) extracted at 300 K closely approximates 0.5, indicating the diffusing species as H<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup>. Furthermore, an elucidation of the interaction effects involving water/oxygen, Na<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup>ions, H<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup>ions, and internal traps sheds light on the plausible mechanism underlying the observed current degradation due to NBTI. Then the low-frequency noise (LFN) dominant model as ▵N model is determined. Finally, the interface traps number of 1.96×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup>eV<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup>is extracted.