A Short-Circuit Protection Method for SiC MOSFET Using Combined <i>V</i> <sub>gs</sub> and <i>V</i> <sub>ds</sub> Detection

This letter proposes a straightforward and reliable short-circuit protection (SCP) method, termed <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> & <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub>-SCP, for SiC MOSFETs by simultaneously monitoring <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub>. The protection is activated when both <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> exceed their respective preset thresholds, enabling effective protection against both hard switching faults (HSF) and faults under load (FUL). Compared to existing methods, the proposed circuit design features a simpler structure and is not limited by the packaging type. A test bench has been built to verify the proposed <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> & <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub>-SCP method, and the results show response times of 246 ns for HSF and 415 ns for FUL.

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Journal
IEEE Transactions on Power Electronics
Published
2025-04-29
DOI
https://doi.org/10.1109/tpel.2025.3565503
Citations
2
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article

A Short-Circuit Protection Method for SiC MOSFET Using Combined V gs and V ds Detection

Hao Feng, Jinxiao Wei, Bao‐Hsien Wu, Li Ran et al.
2 citations
IEEE Transactions on Power Electronics
Silicon Carbide Semiconductor Technologies
1.46
article

A Short-Circuit Protection Method for SiC MOSFET Using Combined V gs and V ds Detection

Hao Feng, Jinxiao Wei, Bao‐Hsien Wu, Li Ran, Jiaming Xie
article en
2 citations

Abstract

This letter proposes a straightforward and reliable short-circuit protection (SCP) method, termed <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> & <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub>-SCP, for SiC MOSFETs by simultaneously monitoring <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub>. The protection is activated when both <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> exceed their respective preset thresholds, enabling effective protection against both hard switching faults (HSF) and faults under load (FUL). Compared to existing methods, the proposed circuit design features a simpler structure and is not limited by the packaging type. A test bench has been built to verify the proposed <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> & <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub>-SCP method, and the results show response times of 246 ns for HSF and 415 ns for FUL.

IEEE Transactions on Power ElectronicsVol. 40(9)
Chongqing University (CN), Hefei University of Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 18%
Silicon Carbide Semiconductor Technologies
1.46
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