A Short-Circuit Protection Method for SiC MOSFET Using Combined <i>V</i> <sub>gs</sub> and <i>V</i> <sub>ds</sub> Detection
This letter proposes a straightforward and reliable short-circuit protection (SCP) method, termed <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> & <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub>-SCP, for SiC MOSFETs by simultaneously monitoring <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub>. The protection is activated when both <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> exceed their respective preset thresholds, enabling effective protection against both hard switching faults (HSF) and faults under load (FUL). Compared to existing methods, the proposed circuit design features a simpler structure and is not limited by the packaging type. A test bench has been built to verify the proposed <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> & <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub>-SCP method, and the results show response times of 246 ns for HSF and 415 ns for FUL.
Authors
- Hao Feng (ORCID: https://orcid.org/0000-0001-8447-1376)
- Jinxiao Wei (ORCID: https://orcid.org/0000-0002-5957-1209)
- Bao‐Hsien Wu
- Li Ran (ORCID: https://orcid.org/0000-0002-9626-6799)
- Jiaming Xie
Institutions
- Chongqing University (CN)
- Hefei University of Technology (CN)
Publication Details
- Journal
- IEEE Transactions on Power Electronics
- Published
- 2025-04-29
- DOI
- https://doi.org/10.1109/tpel.2025.3565503
- Citations
- 2
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.46