CdZnTe Crystals With Low Defects and High Electron Mobility-Lifetime Product

3-inches CdZnTe ingot with a large single-crystal volume was grown with self-developed THM furnace and process. Observations by IR transmission microscopy revealed that Te inclusions within the crystal were maintained below 5 m with a quite low density. A 5 mm × 5 mm × 1.26 mm planar detector fabricated with CdZnTe crystal exhibited a leakage current of 10.63 nA under a bias voltage of 1000 V, indicating excellent working voltage. The energy resolution of the planar detector reached 5.65% at <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">241</sup>[email protected], and its μ<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub>τ<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> was calculated to be 5.90 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>/V. A 4 × 4 pixelated detector was also fabricated using a 5 mm × 5 mm × 1 mm crystal, the central four pixels of which achieved energy resolutions of 4.91%, 4.52%, 4.82%, and 4.88%, exhibiting quite good uniformity.