Half-Oxidized MoS₂-Based Memristor by UV-Ozone Treatment

In this study, we demonstrated a multiresistive state memristor with UV-ozone-treated two-dimensional semiconductor MoS2 to realize resistive switching. A lateral junction of the MoS2 and MoOx memristor was prepared by selectively oxidizing a portion of the MoS2 surface. Memristive properties were investigated following the confirmation of MoOx formation on the MoS2 surface via optical and electrical characterization. These properties included multiresistive state behavior dependent on the voltage sweep range, low resistance state current level twice that of the high resistance state, and robust stability (∼5000 s). Consequently, the potential for developing a two-dimensional, oxide-based memristor is presented based on an analysis of the voltage–current relationship and proposed switching mechanism of the MoS2–MoOx junction.