Ion Gel-Modulated Low-Temperature Field-Effect Phototransistors with Multispectral Responsivity for Artificial Synapses

We report an ion-gel-gated amorphous indium gallium zinc oxide (a-IGZO) optoelectronic neuromorphic transistors capable of synaptic emulation in both photoelectric dual modes. The ion-gel dielectric in the coplanar-structured transistor, fabricated via ink-jet printing, exhibits excellent double-layer capacitance (>1 μF/cm²) and supports low-voltage operation through lateral gate coupling. The integration of ink-jet printing technology enables scalable and large-area fabrication, highlighting its industrial feasibility. Electrical stimulation-induced artificial synaptic behaviors were successfully demonstrated through ion migration in the gel matrix. Through a simple and controllable oxygen vacancy engineering process involving low-temperature oxygen-free growth and post-annealing process, a sufficient density of stable subgap states was generated in IGZO, extending its responsivity spectrum to the visible-red region and enabling wavelength-discriminative photoresponses to 450/532/638 nm visible light. Notably, the subgap states exhibited unique interaction dynamics with low-energy photons in optically triggered pulse responses. Critical synaptic functionalities-including short-term plasticity (STP), long-term plasticity (LTP), and paired-pulse facilitation (PPF)-were successfully simulated under both optical and electrical stimulations. The device achieves low energy consumption while maintaining compatibility with flexible substrates through low-temperature processing (≤150 °C). This study establishes a scalable platform for multimodal neuromorphic systems utilizing printed iontronic architectures.