Discovery of a Structure Mediated by a Reconstructed Aluminum Atomic Layer at an AlN/Al<sub>2</sub>O<sub>3</sub> Interface

Interfaces often exhibit a variety of unusual physical phenomena. The highly complex atomic arrangements exist at interfaces that crucially affect the properties of a material; however, atom-by-atom pinpointing the structural features always presents a significant challenge. Herein we employed a combination of electron microscopy, calculations, and simulations to investigate the atomic-level structural characteristic of the well-known Al-O-N interface in a large lattice mismatch system. We observed a reconstructed atom layer mediated by Al atoms via aberration-corrected scanning transmission electron microscopy. The presence of Al-O and Al-N chemical bonds was identified at the interfacial region via electron energy loss spectroscopy. Consistent with the result of first-principles calculations, we unambiguously clarified the ratio 1:2 of O/N atoms at the interface, and the reduction in the band gap was primarily attributed to the weakening of Al-O bonds. Our findings provide a vivid case to deepen our understanding of complex interfaces.

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Publication Details

Journal
Nano Letters
Published
2025-04-28
DOI
https://doi.org/10.1021/acs.nanolett.5c01842
Citations
4
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
2.92

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Discovery of a Structure Mediated by a Reconstructed Aluminum Atomic Layer at an AlN/Al2O3 Interface

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article

Discovery of a Structure Mediated by a Reconstructed Aluminum Atomic Layer at an AlN/Al2O3 Interface

Dabing Li, Xinyan Zhou, Dong Wang, Xiangyu Wu, Xiaojuan Sun, Wenwen Li, Wei Zhang, Lijun Zhang, Qing Liang, Jianwei Ben, Jiang Zhou, Ning Wang, Zhaoji Huang, Aofei Wei
article en
4 citations

Abstract

Interfaces often exhibit a variety of unusual physical phenomena. The highly complex atomic arrangements exist at interfaces that crucially affect the properties of a material; however, atom-by-atom pinpointing the structural features always presents a significant challenge. Herein we employed a combination of electron microscopy, calculations, and simulations to investigate the atomic-level structural characteristic of the well-known Al-O-N interface in a large lattice mismatch system. We observed a reconstructed atom layer mediated by Al atoms via aberration-corrected scanning transmission electron microscopy. The presence of Al-O and Al-N chemical bonds was identified at the interfacial region via electron energy loss spectroscopy. Consistent with the result of first-principles calculations, we unambiguously clarified the ratio 1:2 of O/N atoms at the interface, and the reduction in the band gap was primarily attributed to the weakening of Al-O bonds. Our findings provide a vivid case to deepen our understanding of complex interfaces.

Nano LettersVol. 25(21)
Jilin University (CN), Chinese Academy of Sciences (CN), Changchun Institute of Optics, Fine Mechanics and Physics (CN), Division of Materials Science and Engineering (AU), Jilin Medical University (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 9%
Semiconductor materials and devices
2.92
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