Understanding the Ga Polar n‐GaN Surface after Mg Diffusion Process
This work reports on the control of the n‐GaN surface using a simple Mg diffusion process. It is shown that the Mg diffusion process enables a GaN surface without Fermi‐level pinning. The process results in the realization of n‐GaN unipolar camel diodes where increasing the metal work function leads to an incremental barrier height increase. Notably, the camel diode yields a record Schottky barrier height, indicating the possibility of improving the reverse characteristics of future GaN unipolar diodes.
Authors
- Hiroshi Amano
- Biplab Sarkar (ORCID: https://orcid.org/0000-0003-0074-0626)
- Manuel Fregolent (ORCID: https://orcid.org/0000-0003-0801-2260)
- Joel T. Asubar (ORCID: https://orcid.org/0000-0002-1829-4129)
- Jia Wang (ORCID: https://orcid.org/0000-0001-7025-6464)
- Matteo Meneghini (ORCID: https://orcid.org/0000-0003-2421-505X)
- Carlo De Santi (ORCID: https://orcid.org/0000-0001-6064-077X)
- Simranjit Singh (ORCID: https://orcid.org/0000-0002-6245-1590)
- Oves Badami (ORCID: https://orcid.org/0000-0003-1975-2803)
- Hirotaka Watanabe
Institutions
- University of Fukui (JP)
- University of Padua (IT)
- Indian Institute of Technology Roorkee (IN)
- Nagoya University (JP)
- Indian Institute of Technology Hyderabad (IN)
Publication Details
- Journal
- physica status solidi (a)
- Published
- 2025-04-27
- DOI
- https://doi.org/10.1002/pssa.202500090
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Department of Science and Technology, Ministry of Science and Technology, India
- Japan Society for the Promotion of Science