Tailoring physical properties and evaluating photosensing performance of lead sulfide thin films using AACVD

Controlling the deposition temperature is an effective method for tailoring the physical properties of lead sulfide (PbS) thin films , which are essential for photo-sensing devices. In this study, PbS films were deposited using a single-source precursor of lead xanthate via the aerosol-assisted chemical vapor deposition (AACVD) technique. The deposition temperatures were varied at 200, 250, and 300 °C, while all other parameters remained constant. Various diagnostic techniques were employed to analyze the films' properties. Thermogravimetric analysis (TGA) indicated significant weight loss at 131 °C. X-ray diffraction (XRD) confirmed the formation of cubic PbS films in the galena phase, with alignment along the (200) direction across all temperatures. The crystallite size , determined using the Halder-Wagner equation, decreased with increasing temperature. Additionally, the lattice constant decreased as deposition temperature increased, with micro-strain values shifting from 1.03 to -0.93, indicating a transition from tensile to compressive strain . Field emission scanning electron microscopy (FE-SEM) revealed that higher deposition temperatures produced more regular grain shapes, achieving complete cubic morphology at 300 °C. Average grain sizes were estimated to be 161 nm, 250 nm, and 292 nm corresponding to the respective deposition temperatures. Band gap energies measured were 2.24 eV at 200 °C, 2.21 eV at 250 °C, and returning to 2.24 eV at 300 °C. The conductivity type of PbS films transitioned from p-type at 200 °C to n-type at higher temperatures. Activation energies were found to be 0.198 eV, 0.151 eV, and 0.211 eV for films deposited at 200 °C, 250 °C, and 300 °C, respectively. The photo-sensing properties of all films were evaluated at wavelengths of 397.5 nm and 459.5 nm under applied potentials of 0.2 V, 0.4 V, and 0.6 V. The rise time was observed to be within a few seconds, while the decay time was notably longer. • PbS films synthesized via AACVD at 300 °C show high purity, uniform cubic grains, and a crystallite size of 13.72 nm, indicating scalable production. • Microstrain shifts from tensile to compressive with temperature, while grain sizes increase from 161 nm to 292 nm, highlighting the need for parameter optimization. • Band gaps of 2.21–2.24 eV at different temperatures, much higher than 0.41 eV, indicate quantum confinement and potential for optoelectronics. • Electrical conductivity rises with changes in activation energy, showing electronic properties can be tuned by adjusting deposition temperature. • Future work aims to optimize deposition to improve film performance for advanced photodetectors and optoelectronics.

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Publication Details

Journal
Journal of Alloys and Compounds
Published
2025-04-27
DOI
https://doi.org/10.1016/j.jallcom.2025.180549
Citations
3
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
2.19
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article

Tailoring physical properties and evaluating photosensing performance of lead sulfide thin films using AACVD

Ayan Mukherjee, Aeshah Alasmari, Ahmed A. Aboud, B. Ahmed
3 citations
Journal of Alloys and Compounds
Chalcogenide Semiconductor Thin Films
2.19
article

Tailoring physical properties and evaluating photosensing performance of lead sulfide thin films using AACVD

Ayan Mukherjee, Aeshah Alasmari, Ahmed A. Aboud, B. Ahmed
article en
3 citations

Abstract

Controlling the deposition temperature is an effective method for tailoring the physical properties of lead sulfide (PbS) thin films , which are essential for photo-sensing devices. In this study, PbS films were deposited using a single-source precursor of lead xanthate via the aerosol-assisted chemical vapor deposition (AACVD) technique. The deposition temperatures were varied at 200, 250, and 300 °C, while all other parameters remained constant. Various diagnostic techniques were employed to analyze the films' properties. Thermogravimetric analysis (TGA) indicated significant weight loss at 131 °C. X-ray diffraction (XRD) confirmed the formation of cubic PbS films in the galena phase, with alignment along the (200) direction across all temperatures. The crystallite size , determined using the Halder-Wagner equation, decreased with increasing temperature. Additionally, the lattice constant decreased as deposition temperature increased, with micro-strain values shifting from 1.03 to -0.93, indicating a transition from tensile to compressive strain . Field emission scanning electron microscopy (FE-SEM) revealed that higher deposition temperatures produced more regular grain shapes, achieving complete cubic morphology at 300 °C. Average grain sizes were estimated to be 161 nm, 250 nm, and 292 nm corresponding to the respective deposition temperatures. Band gap energies measured were 2.24 eV at 200 °C, 2.21 eV at 250 °C, and returning to 2.24 eV at 300 °C. The conductivity type of PbS films transitioned from p-type at 200 °C to n-type at higher temperatures. Activation energies were found to be 0.198 eV, 0.151 eV, and 0.211 eV for films deposited at 200 °C, 250 °C, and 300 °C, respectively. The photo-sensing properties of all films were evaluated at wavelengths of 397.5 nm and 459.5 nm under applied potentials of 0.2 V, 0.4 V, and 0.6 V. The rise time was observed to be within a few seconds, while the decay time was notably longer. • PbS films synthesized via AACVD at 300 °C show high purity, uniform cubic grains, and a crystallite size of 13.72 nm, indicating scalable production. • Microstrain shifts from tensile to compressive with temperature, while grain sizes increase from 161 nm to 292 nm, highlighting the need for parameter optimization. • Band gaps of 2.21–2.24 eV at different temperatures, much higher than 0.41 eV, indicate quantum confinement and potential for optoelectronics. • Electrical conductivity rises with changes in activation energy, showing electronic properties can be tuned by adjusting deposition temperature. • Future work aims to optimize deposition to improve film performance for advanced photodetectors and optoelectronics.

Journal of Alloys and CompoundsVol. 1028
Beni-Suef University (EG), Patliputra University (IN), University of Bisha (SA)
Openalex Percentile: Top 13%
Chalcogenide Semiconductor Thin Films
2.19
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