Graphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processing

A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. A comprehensive statistical analysis of the electrical data revealed a high yield (96%) and low variation in the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 10⁵ to 10⁶ V/W in the wavelength range from 400 to 1800 nm with a response time of 10 ms. The spectral sensitivity compares well to that obtained via similar GFET-QD photodetectors. The device concept enables gate-tunable suppression or enhancement of the photovoltage, which may be exploited for electric shutter operation by toggling between the signal capture and shutter states. The devices show good stability over a wide operation range. Furthermore, an integration solution with complementary metal-oxide-semiconductor technology is presented to realize image-sensor-array chips and a proof-of-concept image system. This work demonstrates the potential for the volume manufacture of infrared photodetectors for a wide range of imaging applications.