Resistive switching characteristics of fullerene in pectin polysaccharide thin film

The demand for eco-friendly, nonvolatile memory technologies in artificial intelligence and the Internet of Things highlight the need for sustainable innovations. This study explores incorporating C 60 into pectin polysaccharide thin films as sustainable resistive switching random access memory (ReRAM) alternatives. Employing the SON/nC 60 method, C 60 was integrated into pectin at concentrations of 0.05, 0.10, 0.15, and 0.20 wt.%, enhancing resistive switching characteristics. Fourier transform infrared spectroscopy, atomic force microscopy, and semiconductor parameter analysis characterized the device’s properties. Notably, the incorporation of 0.20 wt.% C 60 significantly enhanced the resistive switching performance of the pectin-based devices, achieving an increase of nearly three orders of magnitude in the ON/OFF ratio and a 1.96 times improvement in the Read Memory Window compared with pure pectin devices, while maintaining stable performance over 100 switching cycles. Higher C 60 levels create a denser cross-linked network, raising the energy threshold for switching. This research suggests that pectin-C 60 films are viable, environmentally responsible ReRAM materials, advancing bio-organic applications in sustainable electronics.