Bottom Contact‐Enhanced P‐Type Transport Behavior in Plasma‐Doped MoTe ₂

Two‐dimensional (2D) semiconductors, such as molybdenum ditelluride (MoTe 2 ), hold great promise for future electronic devices, but achieving stable and efficient p ‐type transport remains a challenge. A major issue is the formation of high contact barriers, which significantly hinder hole injection due to poor coordination between contact engineering and doping. Herein, the enhanced p ‐type transport in MoTe 2 transistors are reported by combining contact engineering and surface oxidation doping in a bottom‐contacted configuration. By comparing top‐contacted and bottom‐contacted devices, it is demonstrated that the bottom‐contacted design ensures uniform doping across the entire channel, preventing the formation of high barriers caused by unintentional p –n junctions at the contacts. As an application demonstration, an inverter exhibiting a complete logic swing is realized by integrating a p ‐type MoTe 2 transistor with an n‐type ReS 2 transistor. Moreover, the selective nature of the plasma doping process allows for effective p ‐doping of MoTe 2 without affecting materials with high oxidation resistance. An anti‐ambipolar MoTe 2 ‐ReS 2 heterostructure and a three‐valued logic inverter circuit are further demonstrated, verifying the potential of p ‐type MoTe 2 transistors for multi‐valued logic applications. The findings highlight the importance of integrating contact engineering with selective doping and provide an effective strategy for optimizing p ‐type transport in 2D semiconductors.