Topological Magnetism: Materials and Devices

Abstract The emerging interest in topological magnetism has ignited exciting vitality in the field of spintronics, thereby offering a promising route for breaking Moore's law constraints and establishing an efficient information storage model. Unlike the conventional 2D storage cell based on macroscopic magnetization, magnetic skyrmions—the representative of topological magnetism—are considered candidates for realizing 3D memory, such as “racetrack memory,” facilitating the development of topological spintronics. Since the discovery of skyrmion‐hosting materials, extensive studies on topological magnetic materials are conducted, although challenges have arisen with rapid research progress. Herein, the recent progress in topological spintronics, including material and device design, is reviewed. Beyond bulk magnets, research on topological magnetism is focused on low‐dimensional materials, including magnetic films and 2D magnetic materials, which are promising candidates for magnetic storage devices. Furthermore, the design of new structures, such as in lattice or composition asymmetry engineering, to expand the family of topological magnetic materials is essential. In addition to skyrmions, various topological magnetic structures such as antiskyrmions, merons, and 3D complex structures are detailed. Furthermore, topological magnetism manipulation and related principal devices are discussed. This review provides an opportunity to generate more interest and deepen the discussion of topological magnetism.