Examining the morphology and surface composition of a nanostructured tin film on porous silicon
Subject of study. Porous silicon is a material with significant potential for the development of optoelectronic and sensor devices, enhancing various technologies and improving their efficiency. It is used in light-emitting diodes, photodetectors, solar cells, sensors, and other devices that require high light absorption, emission efficiency, and sensitivity to environmental optical values. The deposition of tin particles on porous silicon enables the development of new nanocomposite materials with customized properties for various applications. Vacuum-thermal evaporation is a widely used method for depositing oxide films, producing high-quality, thin layers with good reproducibility and controllable properties. Aim of study. The aim of this study is to investigate the impact of thermally deposited tin on the structure and composition of porous silicon. Method. Porous silicon was fabricated by anodizing monocrystalline silicon plates of KEF (silicon electronic phosphorus) grade with a (100) orientation. The original and tin-coated samples were analyzed using atomic force microscopy, photoluminescence (PL), and X-ray photoelectron spectroscopy to determine their morphology, composition, and characteristics. Main results. The deposition of tin on the surface of the porous layer resulted in the formation of an island-like film through vacuum-thermal evaporation, inhibiting the oxidation of the porous layer. The resulting nanocomposites of porous silicon with deposited tin consisted of tin dioxide, tin suboxide/monoxide, and metallic tin. The application of the vacuum-thermal method for tin-film deposition on porous silicon altered the shape and position of the PL spectrum band and partially increased its intensity. Practical significance. This technique may be applied to the production of composite materials with enhanced characteristics.
Authors
- A. S. Lenshin (ORCID: https://orcid.org/0000-0002-1939-253X)
- S. S. Chernenko (ORCID: https://orcid.org/0009-0005-4323-9163)
- K. B. Kim (ORCID: https://orcid.org/0000-0001-5564-8267)
- С. И. Нифталиев (ORCID: https://orcid.org/0000-0001-7887-3061)
- А. И. Чукавин (ORCID: https://orcid.org/0000-0002-9590-9238)
Institutions
- Voronezh State University of Engineering Technologies (RU)
- Udmurt Federal Research Center, Ural Branch of the Russian Academy of Sciences (RU)
- Voronezh State University (RU)
Publication Details
- Journal
- Journal of Optical Technology
- Published
- 2024-10-01
- DOI
- https://doi.org/10.1364/jot.91.000675
- Primary Topic
- Silicon Nanostructures and Photoluminescence
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Russian Science Foundation