A BJT-Based Amplifier-Less Temperature Sensor With 12-Bit SAR ADC Readout and ±0.6°C (3σ) Inaccuracy From −40°C to 120°C

This paper proposes a topology of amplifier-less temperature sensor based on BJT. Two base-emitter voltages are connected to the input and the reference voltage of the ADC. The signal ratio of X = VBE2 /VBE1 is directly digitalized by 12-bit SAR ADC. The proposed topology can fully utilize the ADC dynamic range. This not only reduces the power consumption, but also ensures the sensitivity of temperature digitization, relaxing the resolution requirement of the ADC. In the design, the 12-bit SAR ADC, with an improved segmented-capacitor DAC and optimization of the comparator, has a compact area and achieves high accuracy. The proposed temperature sensor is fabricated in a standard 0.18 μm CMOS process and occupies 0.02 mm2. It draws 30 μA from a 1.8V supply at room temperature. As a result, the proposed sensor achieves a low conversion time of 16 μs and an inaccuracy of ± 0.6°C (3) from -40°C to 120°C.

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Publication Details

Journal
IEEE Transactions on Circuits & Systems II Express Briefs
Published
2025-04-25
DOI
https://doi.org/10.1109/tcsii.2025.3564315
Citations
2
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
Field-Weighted Citation Impact
1.46

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article

A BJT-Based Amplifier-Less Temperature Sensor With 12-Bit SAR ADC Readout and ±0.6°C (3σ) Inaccuracy From −40°C to 120°C

Keping Wang, Jiguang Du, Jun Yang, Zongle Ma
2 citations
IEEE Transactions on Circuits & Systems II Express Briefs
CCD and CMOS Imaging Sensors
1.46
article

A BJT-Based Amplifier-Less Temperature Sensor With 12-Bit SAR ADC Readout and ±0.6°C (3σ) Inaccuracy From −40°C to 120°C

Keping Wang, Jiguang Du, Jun Yang, Zongle Ma
article en
2 citations

Abstract

This paper proposes a topology of amplifier-less temperature sensor based on BJT. Two base-emitter voltages are connected to the input and the reference voltage of the ADC. The signal ratio of X = VBE2 /VBE1 is directly digitalized by 12-bit SAR ADC. The proposed topology can fully utilize the ADC dynamic range. This not only reduces the power consumption, but also ensures the sensitivity of temperature digitization, relaxing the resolution requirement of the ADC. In the design, the 12-bit SAR ADC, with an improved segmented-capacitor DAC and optimization of the comparator, has a compact area and achieves high accuracy. The proposed temperature sensor is fabricated in a standard 0.18 μm CMOS process and occupies 0.02 mm2. It draws 30 μA from a 1.8V supply at room temperature. As a result, the proposed sensor achieves a low conversion time of 16 μs and an inaccuracy of ± 0.6°C (3) from -40°C to 120°C.

IEEE Transactions on Circuits & Systems II Express BriefsVol. 72(11)
Tianjin University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 18%
CCD and CMOS Imaging Sensors
1.46
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A BJT-Based Amplifier-Less Temperature Sensor With 12-Bit SAR ADC Readout and ±0.6°C (3σ) Inaccuracy From −40°C to 120°C — Keping Wang, Jiguang Du, et al. · IEEE Transactions on Circuits & Systems II Express Briefs (2025) | TGRS Research Map | TGRS