Dynamic Voltage-Dependent Modeling of Single Event Transients in CMOS Ring Oscillators

This paper introduces a novel Dynamic Voltage-Dependent (DVD) model for simulating Single-Event Transients (SETs) in CMOS circuits. This model overcomes the limitations of voltage-independent and static voltage-dependent SET models, offering improved accuracy and scalability for a Linear Energy Transfer (LET) of up to 100 MeV·cm²/mg. The model, integrated into SPICE simulations, precisely captures the relationship between SET-induced current pulses and node voltage, allowing to enhance the performance of large signal RF circuits for radiation-sensitive applications. Validations through Technology Computer Aided Design (TCAD) simulations show a close agreement, providing valuable insights into SET effects on oscillators. This advancement in SET modeling is a critical tool for designing high-speed radiation-hardened circuits.