Study of Temperature Dependence and Performance Metrics on GaN Amplifier Designs up to 300°C

This study presents the design and optimization of a Gallium Nitride (GaN) Power Amplifier for extreme thermal environments, with performance evaluated up to 300°C. The design process includes DC bias optimization, stability analysis, load pull characterization, and impedance matching, transitioning from ideal circuit models to physical microstrip simulation on Rogers 4350 substrate. Comprehensive Harmonic Balance simulations analyze key metrics such as power delivery, gain, efficiency, and harmonic distortion. A detailed thermal analysis reveals the amplifier's robust performance under varying junction temperatures, supported by electromagnetic co-simulations to refine real-world applicability. These findings demonstrate the amplifier's suitability for high-frequency, high-power applications in demanding environments, advancing GaN technology for aerospace, telecommunications, and power electronics.