Fast Growth of Ultralong Silica Nanowires during Active Oxidation of Passivated Silicon Carbide

We report the fast vapor-liquid-solid growth of silica nanowires through active oxidation and corrosion of a passivated silicon carbide (SiC) substrate. Silica nanowires are formed from SiO gas generated during the active oxidation of SiC and supplied from the corrosion region. SiO gas is continuously absorbed by Si-Mo nanoparticles formed in the passivated region, leading to the production of ultralong nanowires in large quantities. This study demonstrates a nonequilibrium chemical pump effect that enhances silica nanowire growth by coupling the active oxidation of SiC with silica-oxide-assisted nucleation on the well-passivated SiC substrate.