SiO<sub><i>x</i></sub>-Rh(111) Interface: Stability and Activation of Small Molecules

SiO<sub>2</sub> supported Rh-based catalysts have been extensively used in CO hydrogenation reactions. The incorporation of promoters into the Rh/SiO<sub>2</sub> catalyst modulates the charge on Rh, subsequently enhancing its activity and selectivity toward C<sub>2</sub> oxygenates. Despite this, the structural and electronic properties of the Rh-SiO<sub><i>x</i></sub> interface have not been exhaustively explored. In this study, silicon was evaporated onto the Rh(111) surface, followed by annealing in O<sub>2</sub> to form ultrathin SiO<sub><i>x</i></sub> films. The results indicate that SiO<sub><i>x</i></sub> films grow on the Rh(111) surface in a layer-plus-island mode. The stabilities of the SiO<sub><i>x</i></sub>-Rh interface in O<sub>2</sub> with an elevated pressure and vacuum annealing were examined. Both O<sub>2</sub> and CO can adsorb in the interface of SiO<sub><i>x</i></sub>-Rh in elevated pressures. The binding energies of Si 2p and O 1s shift as oxygen is adsorbed in the interface. The results provide evidence for the activation of small molecules in the metal-oxide interface, and show a passivation effect of an oxide coated metal surface.

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Publication Details

Journal
Langmuir
Published
2025-04-25
DOI
https://doi.org/10.1021/acs.langmuir.5c01035
Primary Topic
Nanocluster Synthesis and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

SiOx-Rh(111) Interface: Stability and Activation of Small Molecules

Changle Mu, Mingshu Chen, Jing Zhou, Lan Chen et al.
Langmuir
Nanocluster Synthesis and Applications
article

SiOx-Rh(111) Interface: Stability and Activation of Small Molecules

Changle Mu, Mingshu Chen, Jing Zhou, Lan Chen, Wuyang Song
article en

Abstract

SiO<sub>2</sub> supported Rh-based catalysts have been extensively used in CO hydrogenation reactions. The incorporation of promoters into the Rh/SiO<sub>2</sub> catalyst modulates the charge on Rh, subsequently enhancing its activity and selectivity toward C<sub>2</sub> oxygenates. Despite this, the structural and electronic properties of the Rh-SiO<sub><i>x</i></sub> interface have not been exhaustively explored. In this study, silicon was evaporated onto the Rh(111) surface, followed by annealing in O<sub>2</sub> to form ultrathin SiO<sub><i>x</i></sub> films. The results indicate that SiO<sub><i>x</i></sub> films grow on the Rh(111) surface in a layer-plus-island mode. The stabilities of the SiO<sub><i>x</i></sub>-Rh interface in O<sub>2</sub> with an elevated pressure and vacuum annealing were examined. Both O<sub>2</sub> and CO can adsorb in the interface of SiO<sub><i>x</i></sub>-Rh in elevated pressures. The binding energies of Si 2p and O 1s shift as oxygen is adsorbed in the interface. The results provide evidence for the activation of small molecules in the metal-oxide interface, and show a passivation effect of an oxide coated metal surface.

LangmuirVol. 41(17)
University of Wyoming (US), Xiamen University (CN), Physical Sciences (United States) (US), Wyoming Department of Education (US)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 94%
Nanocluster Synthesis and Applications
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