Progress and Prospects of Extreme Ultraviolet Multilayer Film Research

Extreme ultraviolet lithography technology has become a key process in the semiconductor manufacturing industry. Owing to the pronounced absorption characteristics and elevated refractive index associated with extreme ultraviolet light, extreme ultraviolet lithography systems necessitate the utilization of optical components that comprise multilayer film structures as mirrors. This configuration is essential to fulfill the stringent requirements for high reflectivity in such applications. This paper adopts a research method of literature reading and analysis, describing the current research status of extreme ultraviolet multilayer films, including the performance of extreme ultraviolet multilayer films, related technologies for preparation, and optimization problems that need to be addressed.This paper further delineates the multilayer film structures that are applicable to this emerging technology, and it anticipates the prospective developmental trajectory of future extreme ultraviolet multilayer films. It can be concluded that the theory of 13.5 nm extreme ultraviolet multilayer films has matured, but difficulties still exist in their practical preparation. In the future, as the performance requirements of integrated circuits continue to increase, EUV multilayer films will develop towards shorter wavelengths of 6.X nm.