Microstructure Analysis of Current‐Fired Contacts on TOPCon Layers

We report on the analysis of the microstructure of a current‐fired contact formed by screen printing, drying, and sintering of a silver paste and subsequent laser‐enhanced contact optimization (LECO) for silicon solar cells with tunnel‐oxide passivated contacts (TOPCon) on the TOPCon side. The analysis is based on scanning electron microscopy and energy dispersive X‐ray spectroscopy. We show that a new phase is formed during LECO at individual points of the interface between the contact finger and the polycrystalline silicon layer consisting of silver and silicon. The altered material combination is confined to the metal and the polycrystalline layer only and does not penetrate through the tunnel oxide into the silicon wafer. We conclude that the mechanism for the contact formation on the TOPCon stack is very similar to the one reported for the front contact of passivated emitter and rear cells.

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Publication Details

Journal
Solar RRL
Published
2025-04-24
DOI
https://doi.org/10.1002/solr.202500197
Citations
2
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
Type
article
Field-Weighted Citation Impact
1.46
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article

Microstructure Analysis of Current‐Fired Contacts on TOPCon Layers

Daniel Ourinson, Jonas D. Huyeng, Johannes Greulich, Sebastian Mack et al.
2 citations
Solar RRL
Integrated Circuits and Semiconductor Failure Analysis
1.46
article

Microstructure Analysis of Current‐Fired Contacts on TOPCon Layers

Daniel Ourinson, Jonas D. Huyeng, Johannes Greulich, Sebastian Mack, Stefan Rein, Cyril Léon
article en
2 citations

Abstract

We report on the analysis of the microstructure of a current‐fired contact formed by screen printing, drying, and sintering of a silver paste and subsequent laser‐enhanced contact optimization (LECO) for silicon solar cells with tunnel‐oxide passivated contacts (TOPCon) on the TOPCon side. The analysis is based on scanning electron microscopy and energy dispersive X‐ray spectroscopy. We show that a new phase is formed during LECO at individual points of the interface between the contact finger and the polycrystalline silicon layer consisting of silver and silicon. The altered material combination is confined to the metal and the polycrystalline layer only and does not penetrate through the tunnel oxide into the silicon wafer. We conclude that the mechanism for the contact formation on the TOPCon stack is very similar to the one reported for the front contact of passivated emitter and rear cells.

Solar RRLVol. 9(11)
Fraunhofer Institute for Solar Energy Systems (DE)
Openalex Percentile: Top 18%
Integrated Circuits and Semiconductor Failure Analysis
1.46
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