Photoenhanced Galvanic Effect on Carrier Collection of the MOS<sub>2</sub> Contact Layer in Silicon Solar Cells
The photoenhanced galvanic effect of a MoS 2 thin film deposited on a c‐Si solar cell with a goal of enhancing carrier collection is investigated. The MoS 2 contact layer is deposited by a spin coating process with a subsequent rapid thermal process. The nanostructured thin film showed a photogalvanic potential of 0.12 V and localized electric conductance and Coulomb blockade with a voltage interval of 0.01 V. The fabricated solar cell with the MoS 2 thin film on the n‐type emitter surface shows a short circuit current of 8.21 A, open circuit voltage of 0.614 V, and conversion efficiency of 14.3% compared to a reference cell without the MoS 2 layer.
Authors
- Inseung Lee
- Srikanta Palei (ORCID: https://orcid.org/0000-0002-4149-599X)
- Keunjoo Kim (ORCID: https://orcid.org/0000-0002-5103-699X)
- Jaeho Choi
- Rajkumar Sahoo (ORCID: https://orcid.org/0009-0008-7952-0346)
- Sel Gi Ryu
Institutions
- Central Institute of Plastics Engineering and Technology (IN)
- Tata Power Solar (India) (IN)
- Jeonbuk National University (KR)
Publication Details
- Journal
- physica status solidi (a)
- Published
- 2025-04-24
- DOI
- https://doi.org/10.1002/pssa.202500039
- Primary Topic
- Silicon and Solar Cell Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Research Foundation
- National Research Foundation of Korea