Strain-induced deep ultraviolet emitting AlGaN quantum wells
Transverse magnetic-polarized emission dominates in Al-rich AlGaN quantum well-based high-efficient non-toxic deep ultraviolet light sources. In this study, we theoretically analyzed the effect of external strain on the spontaneous emission and optical gain properties of Al-rich AlGaN quantum wells using the self-consistent approach to solve the Schrödinger equation based on an eight-band k⋅p Hamiltonian or Poisson equation. External strain can modify valence band alignment and significantly enhance transverse electric-polarized spontaneous emission and optical gain. The peak transverse electric-polarized spontaneous emission rate increases by 838.3% under a stress of 8 GPa. These results provide critical insights and design strategies for the advanced AlGaN-based ultraviolet optoelectronic devices.
Authors
- Jiaheng Nie
- Changming Xie (ORCID: https://orcid.org/0000-0002-2089-203X)
- Yaming Zhang (ORCID: https://orcid.org/0000-0002-9846-8984)
- Xin Cui (ORCID: https://orcid.org/0000-0001-8371-353X)
- Nian Liu (ORCID: https://orcid.org/0000-0002-5966-0244)
- Yan Zhang (ORCID: https://orcid.org/0000-0002-7329-0382)
- Ruhao Liu (ORCID: https://orcid.org/0000-0002-2636-0210)
Institutions
- University of Electronic Science and Technology of China (CN)
- Chinese Academy of Sciences (CN)
- Chengdu University of Information Technology (CN)
- Beijing Institute of Nanoenergy and Nanosystems (CN)
- University of Chinese Academy of Sciences (CN)
- Chengdu Technological University
- Qingdao University of Technology (CN)
Publication Details
- Journal
- Journal of Applied Physics
- Published
- 2025-04-24
- DOI
- https://doi.org/10.1063/5.0259967
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- Fundamental Research Funds for the Central Universities