Hypophosphorous Acid Additive Engineering for Efficient Cu<sub>2</sub>AgBiI<sub>6</sub> Solar Cells

Abstract Perovskite solar cells have demonstrated significant performance advancements over the past decade, characterized by their low‐cost fabrication and compatibility with both rigid and flexible substrates. Despite their potential, challenges such as long‐term instability and the toxicity of lead in high‐performance devices hinder their commercialization. Recently, the perovskite‐inspired material Cu 2 AgBiI 6 (CABI) is explored as a light absorber due to its promising optoelectronic properties. However, its wide bandgap and difficulties in producing high‐quality films limit its photovoltaic performance. In this study, hypophosphorous acid (H 3 PO 2 ) is introduced to the CABI precursor solution, generating in situ silver nanoparticles that enhance light absorption through localized surface plasmon resonance. The incorporation of H 3 PO 2 improved the crystallinity and surface morphology of CABI films while reducing defect states. Solvent vapor annealing is further employed to optimize the film quality. As a result, the optimal CABI solar cell achieved a power conversion efficiency of 2.22%, a fourfold increase over the pristine film (0.55%). Additionally, the CABI device demonstrated an efficiency of 5.66% under 1000 lux 6000 K indoor illumination, showcasing its potential for powering Internet of Things devices. This strategy is further validated in the CuAgBiI 5 system, offering a pathway to enhance the performance of perovskite‐inspired solar cells.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-04-24
DOI
https://doi.org/10.1002/adfm.202504863
Citations
5
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
3.65

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article

Hypophosphorous Acid Additive Engineering for Efficient Cu2AgBiI6 Solar Cells

Huajie Yin, Jian Kang, Jianwei Su, Jie Xu et al.
5 citations
Advanced Functional Materials
Chalcogenide Semiconductor Thin Films
3.65
article

Hypophosphorous Acid Additive Engineering for Efficient Cu2AgBiI6 Solar Cells

Huajie Yin, Jian Kang, Jianwei Su, Jie Xu, Jiang Xu, Shuting Ma, Qi Zhang, Shan Chen, Tao Liang
article en
5 citations

Abstract

Abstract Perovskite solar cells have demonstrated significant performance advancements over the past decade, characterized by their low‐cost fabrication and compatibility with both rigid and flexible substrates. Despite their potential, challenges such as long‐term instability and the toxicity of lead in high‐performance devices hinder their commercialization. Recently, the perovskite‐inspired material Cu 2 AgBiI 6 (CABI) is explored as a light absorber due to its promising optoelectronic properties. However, its wide bandgap and difficulties in producing high‐quality films limit its photovoltaic performance. In this study, hypophosphorous acid (H 3 PO 2 ) is introduced to the CABI precursor solution, generating in situ silver nanoparticles that enhance light absorption through localized surface plasmon resonance. The incorporation of H 3 PO 2 improved the crystallinity and surface morphology of CABI films while reducing defect states. Solvent vapor annealing is further employed to optimize the film quality. As a result, the optimal CABI solar cell achieved a power conversion efficiency of 2.22%, a fourfold increase over the pristine film (0.55%). Additionally, the CABI device demonstrated an efficiency of 5.66% under 1000 lux 6000 K indoor illumination, showcasing its potential for powering Internet of Things devices. This strategy is further validated in the CuAgBiI 5 system, offering a pathway to enhance the performance of perovskite‐inspired solar cells.

Advanced Functional MaterialsVol. 35(40)
Anhui University (CN), Chinese Academy of Sciences (CN), Hefei Institutes of Physical Science (CN), Institute of Solid State Physics (CN)
National Natural Science Foundation of China, Anhui University, China Postdoctoral Science Foundation, Natural Science Foundation of Anhui Province
Openalex Percentile: Top 7%
Chalcogenide Semiconductor Thin Films
3.65
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