Coexistence of electronic and phononic higher-order band topology in group III-V monolayers

The authors reveal here that III-V monolayers of $X\phantom{\rule{0}{0ex}}Y$ ($X$=B, Al, Ga, In; $Y$=N, P, As, Sb), with planar and low-buckled honeycomb structures, exhibit both electronic and phononic higher-order band topology. The explicit existence of hallmark corner states with quantized fractional charge is presented clearly. Moreover, they point out that the variation of atomic masses in III-V monolayers can induce phonon band inversion, leading to different quantized fractional charges.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2025-04-24
DOI
https://doi.org/10.1103/physrevb.111.165205
Citations
1
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
1.25

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article

Coexistence of electronic and phononic higher-order band topology in group III-V monolayers

Xianyong Ding, Da‐Shuai Ma, Fangyang Zhan, X. B. Zhu et al.
1 citations
Physical review. B./Physical review. B
Topological Materials and Phenomena
1.25
article

Coexistence of electronic and phononic higher-order band topology in group III-V monolayers

Xianyong Ding, Da‐Shuai Ma, Fangyang Zhan, X. B. Zhu, Ke Ye, Rui Wang
article en
1 citations

Abstract

The authors reveal here that III-V monolayers of $X\phantom{\rule{0}{0ex}}Y$ ($X$=B, Al, Ga, In; $Y$=N, P, As, Sb), with planar and low-buckled honeycomb structures, exhibit both electronic and phononic higher-order band topology. The explicit existence of hallmark corner states with quantized fractional charge is presented clearly. Moreover, they point out that the variation of atomic masses in III-V monolayers can induce phonon band inversion, leading to different quantized fractional charges.

Physical review. B./Physical review. BVol. 111(16)
Chongqing University (CN), Sichuan International Studies University (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation
Openalex Percentile: Top 22%
Topological Materials and Phenomena
1.25
DOISourceOpenAlex
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Coexistence of electronic and phononic higher-order band topology in group III-V monolayers — Xianyong Ding, Da‐Shuai Ma, et al. · Physical review. B./Physical review. B (2025) | TGRS Research Map | TGRS