Temperature Sensitivity Analysis of Electrically Doped GaSb/GaAs Heterojunction TFET

This work proposes a thorough numerical simulation investigation into the impact of temperature for electrically doped GaSb/GaAs heterojunction TFET. Extensive simulation-based analysis of the temperature variability of DC parameters over a 300–450 K temperature range, including transfer characteristics, sub-threshold swing (SS), and ON state current to OFF state current ratio (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oN</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oFF</inf>) has been demonstrated in this study. A standard EDTFET model and the suggested design are compared with regard to RF performance parameters. The RF/Analog conduct of the proposed design against temperature has also been investigated using the TCAD simulator. In the comparative study, it has been found that the GaSb/GaAs heterojunction TFET proposed here is more resistant to temperature effects than the conventional EDTFETs. This demonstrates that in applications that require low power at severe temperatures, the demonstrated GaSb/GaAs heterojunction TFET, is more reliable than the conventional TFET.