Enhancing Dopingless TFETs with SiGe Heterojunctions: A Reliability Perspective

This paper presents a novel heterojunction design for a dopant-less tunneling field-effect transistor (DL-TFET) aimed at enhancing the on-state current <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(I_{on})$</tex> while addressing the challenge of forming an abrupt tunneling junction without doping. The proposed approach utilizes a silicon-germanium (SiGe) layer to replace silicon in the source region, thereby sharpening the tunneling junction at the source/channel (S/C) interface and significantly improving charge carrier tunneling efficiency. Additionally, the device's reliability was analyzed considering the impact of trapped charges at the silicon dioxide interface. Simulation results demonstrate that the SiGe-based heterostructure DL-TFET offers an efficient and reliable solution for low-power applications in next-generation electronic devices.