Physics-Based Ion Track Structure Model for Single-Event Effect Simulations on Power Devices
A physics-based ion track structure was successfully established for ions covering a wide LET range applicable to single-event effect simulations on power devices by modeling the power law profile, which was derived from Geant4 simulation with MicroElec extension. The collected charge in two different types of SiC diodes calculated by the device simulator ECORCE is in good agreement with the experimental results at the low bias condition.
Authors
- Takahiro Makino (ORCID: https://orcid.org/0000-0002-3371-4144)
- Masahiko Midorikawa
- A. Michez (ORCID: https://orcid.org/0000-0002-1012-9620)
- A. Makihara
- J. Boch (ORCID: https://orcid.org/0000-0002-5660-7501)
- F. Wrobel (ORCID: https://orcid.org/0000-0002-2437-1223)
- Takeshi Ohshima (ORCID: https://orcid.org/0000-0002-7850-3164)
- H. Shindou
- S. Kuboyama (ORCID: https://orcid.org/0000-0002-8853-1046)
- Misa Takahashi (ORCID: https://orcid.org/0000-0002-8997-800X)
- Frédéric Saigné
- Norio Nemoto
- Manami Iwata
Institutions
- Centre National de la Recherche Scientifique (FR)
- Japan Aerospace Exploration Agency (JP)
- National Institutes for Quantum Science and Technology (JP)
- Quality and Reliability (Greece) (GR)
- Institut d'Électronique et des Systèmes (FR)
Publication Details
- Journal
- IEEE Transactions on Nuclear Science
- Published
- 2025-04-24
- DOI
- https://doi.org/10.1109/tns.2025.3564242
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00