Temperature-Dependent Sensing Properties of SOI-SDG-FinFET for Chemical Detection
In this study, a chemical-based gas sensor was implemented using a silicon-on-insulator FinFET with a stacked dielectric gate configuration (SOI-SDG-FinFET), employing a conductive organic polymer as the gate material. The polymer gate enhances the sensor's sensitivity to a wide range of chemical analytes, including methanol, iso-propanol, and chloroform. This enhancement is attributed to changes in the work function of the conductive polymer upon exposure to gas vapors, which subsequently modify the electrical characteristics of the proposed device. Furthermore, the temperature dependence of the SOI-SDG-FinFET was analyzed over a range of 250 K to 450 K. The proposed device exhibits a reduced <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{OFF}$</tex> current, an improved <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{ON}/I_{OFF}$</tex> ratio, and enhanced sensitivity. These advancements position the SOI-SDG-FinFET with a conductive polymer gate as a promising candidate for applications in chemical and pharmaceutical industries, environmental monitoring, and biological diagnostics.
Authors
- Bandi Venkata Chandan (ORCID: https://orcid.org/0000-0002-9355-7291)
- Kaushal Nigam (ORCID: https://orcid.org/0000-0001-7588-0856)
- Ajay Kumar Singh (ORCID: https://orcid.org/0000-0002-6716-331X)
- Ashish Kumar (ORCID: https://orcid.org/0000-0003-2366-0098)
- Adil Tanveer (ORCID: https://orcid.org/0009-0006-6971-8098)
- N Dharmender
Institutions
- National Institute of Technology Raipur (IN)
Publication Details
- Published
- 2025-02-20
- DOI
- https://doi.org/10.1109/icsc64553.2025.10968890
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00