Performance Evaluation of Gate-Recessed AlGaN/GaN T-Gated MOSHEMTs for Next-Generation Power Electronics

In this study, we report the DC/RF performance of novel Recessed T-Gated AlGaN/GaN MOSHEMT on SiC wafer. The study compares the performance between the different recessed gate lengths <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{L}_{\text{rec}})$</tex> of MOSHEMT. The study investigates the relative performance of Recessed T-Gated AlGaN/GaN MOSHEMT, exploring the influence of gate recess length. The innovative T-shape gate design, featuring a broad head and narrow foot, effectively leverages the benefits of short-channel architecture while minimizing parasitic effects. Furthermore, the gate recess technique enhances the gate's control over the channel, allowing for more precise modulation of current flow. The devices' DC/RF behavior is explored. Extensive comparative analysis shows that MOSHEMT with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{L}_{\text{rec}}$</tex> of 3 nm outperformed with L<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf> = 100 nm, L<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</inf> = 500 nm, and L<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</inf> = 1000 nm exhibits superior performance resulting in transconductance (GM) and peak ID values of 683.27 mS/mm and 1.81 A/mm, and the highest <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{f}_{\mathbf{T}}$</tex> derived as 329.93 GHz. The promising results from this investigation indicate the potential and applicability of Recessed T-Gated AlGaN/GaN MOSHEMTs in future RF power amplifiers.