Sensitivity Analysis of Dielectric Modulated Dual Gate Gallium Nitride Junctionless Accumulation Mode Nanowire FET Based Biosensor

This study investigates the Dielectric Modulated Dual Metal Gate Gallium Nitride Junctionless Accumulation Mode Nanowire FET (DM-DG-GaN-JAM-NWFET) as a potential biosensor for applications in the biomedical field. To assess its sensing capabilities, neutral and charged biomolecules are analyzed, focusing on the effects of different dielectric constants and charge densities on the device's electrostatic properties. Key parameters, including threshold voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf>) and on-current (Ion) are examined to evaluate the sensitivity of device. Additionally, the performance of the Dual Metal Gate Gallium Nitride Junctionless Accumulation Mode (DG-GaN-JAM) Nanowire FET is compared with that of the Single Metal Gate Gallium Nitride Junctionless Accumulation Mode (SG-GaN-JAM) Nanowire FET. The results highlight that the DM-DG-GaN-JAM-NWFET biosensor is highly effective for biosensing applications.