A Novel 1T-APSUsing 22nm FD-SOI Technology With Record High Tunable Sensitivity Range

A novel one transistor active pixel sensor (1T-APS) with extraordinary tunable sensitivity range is experimentally demonstrated using 22 nm fully depleted silicon-on-insulator (FD-SOI) technology. The proposed device enables independent control of both full well capacity and sensitivity. Two electrodes are connected to the substrate, with one used to form the depletion region beneath the buried oxide (BOX) and the other to tune the movement of photoelectrons. The experimental results show a record high tunable sensitivity range of 340000%, varying from 4 mV/(μJ/cm²) to 13.6 V/(μJ/cm²). With tunable sensitivity, the dynamic range is expanded from 51.5 dB to 101.5 dB, making it promising for high-dynamic-range imaging applications.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2025-04-24
DOI
https://doi.org/10.1109/led.2025.3563988
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
Field-Weighted Citation Impact
0.00

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article

A Novel 1T-APSUsing 22nm FD-SOI Technology With Record High Tunable Sensitivity Range

Ruxuan He, Yong Xu, Peng Zhou, Zehua Zhou et al.
IEEE Electron Device Letters
CCD and CMOS Imaging Sensors
article

A Novel 1T-APSUsing 22nm FD-SOI Technology With Record High Tunable Sensitivity Range

Ruxuan He, Yong Xu, Peng Zhou, Zehua Zhou, Jianfei Cao, Hui Xie, Yu-Long Jiang, Haihua Wang, Xiaolan Tang, Jing Wan
article en

Abstract

A novel one transistor active pixel sensor (1T-APS) with extraordinary tunable sensitivity range is experimentally demonstrated using 22 nm fully depleted silicon-on-insulator (FD-SOI) technology. The proposed device enables independent control of both full well capacity and sensitivity. Two electrodes are connected to the substrate, with one used to form the depletion region beneath the buried oxide (BOX) and the other to tune the movement of photoelectrons. The experimental results show a record high tunable sensitivity range of 340000%, varying from 4 mV/(μJ/cm²) to 13.6 V/(μJ/cm²). With tunable sensitivity, the dynamic range is expanded from 51.5 dB to 101.5 dB, making it promising for high-dynamic-range imaging applications.

IEEE Electron Device LettersVol. 46(7)
Fudan University (CN), Nanjing University of Posts and Telecommunications (CN), Shanghai Fudan Microelectronics (China) (CN), Guangdong Greater Bay Area Institute of Integrated Circuit and System
National Natural Science Foundation of China, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, National Key Research and Development Program of China
Openalex Percentile: Top 93%
CCD and CMOS Imaging Sensors
DOISourceOpenAlex
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A Novel 1T-APSUsing 22nm FD-SOI Technology With Record High Tunable Sensitivity Range — Ruxuan He, Yong Xu, et al. · IEEE Electron Device Letters (2025) | TGRS Research Map | TGRS