An Optoelectronic Integrated Device Featuring Pixelated Array Thin-Film for Direct Spectral Conversion

Optoelectronic hybrid integration technology (OHIT) is poised to meet the escalating requirements for direct spectral signal conversion in optical communication systems, particularly in the context of the big data era where photons are the medium of choice. This work presents the design and fabrication of an optoelectronic integrated device featuring pixelated array thin-film for direct spectral conversion integrating a photovoltaic (PV) component and an organic light-emitting diode (OLED) component, spanning an area of 174.2 cm², making it particularly suitable for large-scale deployment in various practical scenarios. An anti-solvent spraying technique and a mechanical scribing method are employed to ensure the crystallization uniformity and module structural optimization for large-area PV device array, respectively. An ultra-thin Ag barrier layer is integrated into charge generation layer (CGL) of the tandem top-emission OLED (tTE-OLED) to enhance the optical-to-optical conversion efficiency. The integrated device maintains a maximum EQE* of 10.43% and a luminance* of 2032.33 Cd/m² under severely low-light conditions of 20% power of AM1.5 solar simulator. The ability of the integrated device to facilitate direct spectral conversion even under such challenging light conditions significantly broadens its potential applications, such as visible light communication, imaging.