Using programmed defect vehicle to understand printability of defect/2D structures and characterize it through EUV process impact

In this study, we leverage the programmed defects platform to systematically investigate the various effects of the EUV lithography process, with a particular emphasis on the transfer of programmed defects (PD) from design to mask to wafer. We employ an in-house developed methodology and algorithm to correlate programmed defect contours extracted from design, Mask-CDSEM, and Wafer-CDSEM (ADI, AEI). Our investigation focuses on P28 Line-Space features, specifically bridges and breaks, which are inherently two-dimensional in nature, within a defectivity reticle. To gain deeper insight into the behaviour of these 2D defects, we conduct aerial image simulations using Mask-CDSEM-extracted contours of varying defect sizes and coDefect printability in extreme ultraviolet (EUV) lithography plays a crucial role in semiconductor manufacturing, influencing both process optimization and defect mitigation strategies. This study utilizes programmed defects (PDs) as a controlled platform to systematically examine the transfer of defect area from design to mask to wafer, with a focus on two-dimensional (2D) bridge and break defects in pitch 28 line-space (P28L/S) structures. By implementing a Python-based SEM contour extraction algorithm, we quantify defect propagation across fabrication stages and assess the impact of mask 3D (M3D) effects, resist polarity, and process variations on area transfer. Aerial image simulations based on mask CD-SEM contours provide further insights into the role of M3D effects, revealing distinct printability differences between absorber add (Cut) and absorber cut (Add) defects. We explore the influence of resist blur and process-induced variations by comparing negative and positive tone development (NTD/PTD) resists. Additionally, we investigate the impact of focus and illumination conditions on defect area transfer, demonstrating how different dipole settings alter the optimal focus for defect suppression. Extending this study to high-NA EUV lithography, we analyze how anamorphic mask scaling influences defect/2D structure printability. By systematically tracking PD area transfer through multiple process stages, this work provides a framework for understanding defect/2D-structure transfer mechanisms in EUV lithography. The insights gained contribute to advancing defect detection methodologies, improving mask inspection techniques, and enhancing wafer-level patterning strategies for next-generation semiconductor nodes.mpare the simulated results with experimental resist printing. The defect transfer is further analysed under different illumination conditions, including variations in normalized image log slope and focus along with the use of different resist materials.