Disorder impacts on transport and magnetoresistance properties in a gapless ferromagnetic/normal/ferromagnetic phosphorene junction

The ballistic electronic transport and tunneling magnetoresistance (TMR) in a ferromagnetic/normal/ferromagnetic (F/N/F) gapless phosphorene junction have been investigated. This study focuses on the effects of structural disorder-specifically, variations in the width and height of the electrostatic potential barrier and magnetic field-on transport and TMR properties. A low-energy two-band Hamiltonian, derived from the tight-binding model along the armchair direction of phosphorene, is used. Transmission, conductance, and magnetoresistance are calculated using the transfer matrix technique, the Landauer-Büttiker formalism, and the TMR relation, respectively. The findings reveal that structural disorder related to barrier width reduces transmission oscillations and moderately suppresses conductance. A key result is that even slight combined structural disorder significantly degrades TMR properties in a gapless phosphorene F/N/F junction. Furthermore, maintaining transport properties, particularly TMR, in this device requires precise control over fluctuations in externally applied fields, especially the magnetic field.